xemod reserves the right to make changes to this specification without further notice. before the product described here is written into specifications or used in critical applications, the performance characteristics should be verified by contacting xemod. xemod quikpac data www.xemod.com rev. b (6 - 5 - 02) page 1 of 3 qpp - 012 qpp - 012 120w, 925 - 960mhz quikpac module data class ab power stage general description: the qpp - 012 quikpac? rf power module is a class ab amplifier stage designed for use in the output stage of linear rf power amplifiers for cellular base stations. t he power transistors are fabricated using xemod?s advanced design ldmos process. this unit has a factory set, regulated and temperature compensated gate bias, eliminating the need for the user to provide adjustable gate bias voltage circuits and make indiv idual bias adjustments during stage alignment. features: single polarity operation matched for 50 w rf interfaces xemos fet technology stable performance quikpac system compatible quikclip or flange mounting standard operating conditions parameter symbol min nom max units frequency range f 925 960 mhz supply (drain) voltage v d 26.0 28.0 32.0 vd c bias (gate) voltage v g 11.0 12.0 13.0 vdc bias (gate) current, average i g 40 ma rf source & load impedance w 50 ohms load impedance for stable operation (all phases) vswr 10:1 operating baseplate temperature t op - 20 +90 oc output dev ice thermal resistance, channel to baseplate q jc 0.8 oc/w maximum ratings parameter symbol value units supply (drain) voltage v dd 35 vdc control (gate) voltage, v dd = 0 vdc v g 15 vdc input rf power p in 60 w load impedance for continuous operatio n without damage vswr 3:1 output device channel temperature 200 oc lead temperature during reflow soldering +210 oc storage temperature t stg - 40 to +100 oc performance at 28vdc & 25oc parameter symbol min nom max units supply (drain) voltage v d 1,2 27.5 28.0 28.5 vdc quiescent current (total) (1) i dq 900 1,000 1,100 ma power output at 1 db compression (single tone) p - 1 120 130 w gain at 120w pep (two tone) g 12.0 13.0 db gain variation over frequency at 120w output (two tone) d g 0.3 0.5 db input return loss (50 w ref) at 120w pep (two tone) irl 12.0 14.0 db drain efficiency at 120w p out (single tone) h 40 45 % drain efficiency at 120w pep (two tone) h 32 33 % 3 rd order imd product (2 tone at 120w pep;1 mhz spacing) - 28 - 26 dbc
xemod quikpac data www.xemod.com rev. b (6 - 5 - 02) page 2 of 3 qpp - 012 performance at 28vdc & 25oc (continued) parameter symbol min nom max units imd variation ? 100 khz to 25 mhz tone spacing 1.0 2.0 db 2 nd harmonic at 120w p out (single tone) dbc 3 rd harmonic at 120w p out (single tone) dbc g roup (signal) delay t d 4.0 ns transmission phase flatness 0.5 degrees performance at 28vdc over temperature parameter symbol min nom max units power output at 1 db compression (single tone) p - 1 w gain variation over frequency at 24w output (single tone) d g d b input return loss (50 w ref) at 24w pep (two tone) irl db drain efficiency at 120w pep (two tone) h % 3 rd order imd product (2 tone at 120w pep;1 mhz spacing) 4.0 dbc group (signal) delay t d 0.5 ns notes: this gr - version quikpac mod ule has an internally regulated gate voltage that is preset at the factory. a voltage of +12vdc ( 1v) should be applied to each gate lead (pins 1 and 5). no further adjustment is required. the gate voltage is thermally compensated for operation over the te mperature range listed in the data sheet. although the module will operate with lower voltages applied, the internal regulator is not functioning and the specified performance may not be achieved. gate voltage must be applied coincident with or after appl ication of the drain voltage to prevent potentially destructive oscillations. bias voltages should never be applied to a module unless it is terminated on both input and output. the quiescent current set during manufacture will be within the range specifi ed in the performance section (nominal 10%) and is selected to balance imd, input return loss, and efficiency. this setting is suitable for most applications. modules with different optimization profiles are available by special order. internal rf decoup ling is included on all bias leads. no additional bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time - varying waveforms. the rf leads are internally protected against dc voltages up to 100v. care should be taken to avoid video transients that may damage the active devices.
xemod quikpac data www.xemod.com rev. b (6 - 5 - 02) page 3 of 3 qpp - 012 package styles this model is available in both b2 (h10537) and b2f (h10894) package styles. style b2f is shown for reference. please see the applicable outline drawi ng for specific dimensions.
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